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| FDN361BN 30V N-Channel, Logic Level, PowerTrench(R) MOSFET October 2005 FDN361BN 30V N-Channel, Logic Level, PowerTrench(R) MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features * 1.8 A, 30 V. RDS(ON) = 110 m @ VGS = 10 V RDS(ON) = 160 m @ VGS = 4.5 V * Low gate charge * Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities * High performance trench technology for extremely low RDS(ON) D D S G S SuperSOT -3 TM G TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 30 20 (Note 1a) Units V V A W C 1.4 10 0.5 0.46 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 C/W Package Marking and Ordering Information Device Marking 361B Device FDN361BN Reel Size 7'' Tape width 8mm Quantity 3000 units www.fairchildsemi.com (c)2005 Fairchild Semiconductor Corporation FDN361BN Rev A(W) FDN361BN 30V N-Channel, Logic Level, PowerTrench(R) MOSFET Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions ID = 250 A VGS = 0 V, ID = 250 A,Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V ID = 250 A Min 30 Typ Max Units V Off Characteristics 26 1 10 100 mV/C A A nA VDS = 24 V, VGS = 0 V, TJ = 55C On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, 1 2.1 92 120 114 3 110 160 150 V m ID(on) gFS VGS = 10 V, ID = 1.4 A ID = 1.2 A VGS = 4.5 V, VGS = 10 V, ID = 1.4 A, TJ = 125C VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 1.4 A 3.5 4 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 145 35 15 193 47 23 pF pF pF f = 1.0 MHz 1.6 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 3 8 16 2 6 16 29 4 1.8 ns ns ns ns nC nC nC VDS = 15 V, VGS = 4.5 V ID = 1.4 A, 1.3 0.5 0.5 Drain-Source Diode Characteristics VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IF = 1.4 A, IS = 0.42 A (Note 2) 0.8 11 4 1.2 22 V nS nC diF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDN361BN Rev A(W) www.fairchildsemi.com FDN361BN 30V N-Channel, Logic Level, PowerTrench(R) MOSFET Typical Characteristics 5 VGS = 10V 6.0V ID, DRAIN CURRENT (A) 4 2.8 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 VGS = 3.5V 3 3.5V 2 4.0V 4.5V 5.0V 6.0V 10V 1 3.0V 0 0 0.5 1 1.5 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 1 2 3 4 5 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 1.4A VGS = 10V ID = 0.7A 0.225 0.2 0.175 TA = 125oC 0.15 0.125 0.1 0.075 1.4 1.2 1 0.8 TA = 25oC 3 4 5 6 7 8 9 10 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 5 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = 5V ID, DRAIN CURRENT (A) 4 VGS = 0V 1 TA = 125oC 0.1 3 25oC 0.01 2 TA = 125oC 1 25oC -55oC 0 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) -55oC 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN361BN Rev A(W) www.fairchildsemi.com FDN361BN 30V N-Channel, Logic Level, PowerTrench(R) MOSFET Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID =1.4A VDS = 10V 20V 15V CAPACITANCE (pF) 200 180 160 140 120 100 80 60 40 20 8 CISS f = 1 MHz VGS = 0 V 6 4 COSS CRSS 0 5 10 15 20 25 30 2 0 0 0.5 1 1.5 2 2.5 3 Qg, GATE CHARGE (nC) 0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 5 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 1ms 10ms 100ms VGS = 10V SINGLE PULSE RJA = 270oC/W TA = 25oC 1s DC 100s 4 SINGLE PULSE RJA = 270C/W TA = 25C 3 1 2 0.1 1 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 270 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN361BN Rev A(W) www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 |
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